secondary electron 【物理學】次級電子。
【物理學】次級電子。 “secondary“ 中文翻譯： adj. 1.第二(位)的，第二次的；中級的 (opp. ...“electron“ 中文翻譯： n. 【物理學】電子。 the electron bea ...“electron secondary“ 中文翻譯： 二次電子“secondary electron acceptor“ 中文翻譯： 次級電子受體“secondary electron conduction“ 中文翻譯： 次級電子傳導; 二次電子傳導; 二次電子導電“secondary electron conduction (sec)“ 中文翻譯： 二次電子導電“secondary electron counter“ 中文翻譯： 次級電子計數管; 次級電子計數器“secondary electron detector“ 中文翻譯： 二次電子檢測器; 二次電子探測器; 二次裝置“secondary electron donor“ 中文翻譯： 次級電子供體“secondary electron emission“ 中文翻譯： 次級電子發射; 次生電發射; 二次電子發射; 二次電子放射“secondary electron emitter“ 中文翻譯： 二次電子發射電極“secondary electron gap loading“ 中文翻譯： 二次發射互作用空間導納“secondary electron image“ 中文翻譯： 二次電子圖像; 二次電子像“secondary electron multipactor limiter“ 中文翻譯： 次級電子倍增限幅器“secondary electron multiplication“ 中文翻譯： 次級電子倍增“secondary electron multiplier“ 中文翻譯： 二次電子倍加器; 二次電子倍增管; 二次發射電子倍增管; 二級電子倍增器“secondary electron spectrum“ 中文翻譯： 二級電子光譜“secondary electron yield“ 中文翻譯： 二次電子發射系數“secondary emission electron“ 中文翻譯： 二次發射電子“secondary impact electron“ 中文翻譯： 二次碰撞電子“secondary-electron multiplier“ 中文翻譯： 次級電子倍增器; 二子電子倍增器“ion bombardment secondary electron image“ 中文翻譯： 離子轟擊二次電子像; 離子轟擊二次電子象“secondary electron image survey function“ 中文翻譯： 二次電子影像觀測功能“electron“ 中文翻譯： n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子(學)說。 “s electron“ 中文翻譯： s電子
secondary emission |
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Based on the comparison and analysis of the secondary electron emission coefficient of two kinds of emitter gaas in theory , it is concluded that when primary electron energy is lower the deviation of secondary electron emission coefficient of two kinds of emitter gaas will become smaller , while when primary electron energy is higher the deviation will increase 通過對兩種負電子親和勢二次電子發射材料的二次電子發射系數的理論值進行比較和分析，得出：當原電子入射能量較低時，兩種材料的二次電子發射系數差值較小；當原電子入射能量較高時，兩種材料的二次電子發射系數差值較大，而且隨著原電子入射能量的升高，兩種材料的二次電子發射系數差值也在增大。 |
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The factors which influenced the process include the insulator ' s material , structure , the distribution of space electrical field , the way to deal with the surface , the characteristic of voltage waveform , pulse width etc . there are two kinds of theory for the vacuum surface flashover : secondary electron emission avalanche ( seea ) and electron triggered polarization relaxation ( etpr ) 影響該過程的因素包括絕緣材料結構、空間電場分布、表面處理方法、所加電壓特征，脈沖寬度等。研究真空表面閃絡過程有兩類理論：二次電子發射崩潰( seea )和電子引發極化松弛( etpr ) 。 |
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According to secondary electron emission avalanche ( seea ) theory , the effects of insulating materials , shapes , electrode structures of vacuum insulator on surface flashover and its mechanism , design optimization methods for vacuum insulator to improve surface flashover voltage by selecting insulating material , shape and electrode structure are reviewed 摘要根據二次電子發射崩( seea )理論，綜述了真空絕緣子的絕緣介質材料、幾何形狀和電極結構對絕緣子沿面閃絡的影響和機理過程，以及從這三方面優化設計真空絕緣子以提高其沿面閃絡電壓的方法。 |
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The selections of electron microscope magnifying multiple and measuring size in fatigue fracture fractal measure are studied in this paper , and the improved treatment of secondary electron lines scanning fractal dimension , is applied successfully to the measuring of ti alloy welded joint fracture fractal dimension and the valuable selective range of fractal dimension measuring parameter is got , which is very important to further research 本文應用數據處理技術研究了疲勞斷口分維數測量中電鏡放大倍數及測量碼尺的選擇問題，改進了二次電子線掃描分維數處理方法，并成功地應用于鈦合金焊接接頭斷口分維數的測量，得到了有價值的分維數測量參數的選擇范圍，對進一步的研究具有重要意義。 |
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A new model for the growth stage of surface flashover has been developed according to the experimental results , which is based on the solid band theory . it is suggested that the electron multiplication could be attributed to two processes : one is the secondary electron emission avalanche caused by collisional ionization , the other is the micro - discharge caused by the trap centers of insulator . the trap cente 電子倍增的過程與材料的表面態直接相關，材料微觀結構的變化和材料的表面處理都能夠導致材料表面態的變化，引起材料的表面二次電子發射系數以及材料中陷階密度和分布的改變，從而影響了電子倍增的過程，并進一步改變或影響了沿面閃絡的發展過程。 |
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The numerical computing methods of the equations involving the static electric - magnetic field , electronic motion in the static electric - magnetic field , and so on are detailed . the methods of the boundary disposal are introduced . the phenomenon of secondary electron emission has also been studied 介紹了數值計算方法,包括靜電磁場的數值計算、在靜電靜磁場中電子運動軌跡的數值計算、空間電荷密度的數值計算和空間電位分布的數值計算;介紹了邊界處理方法。 |
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In this paper based on the theory of the low energy electrons , the movement of the irons in the counter is analyzed . the theories of sputtering and secondary electron emission are discussed respectively . the irons “ action and effect on the counter are putted forward 本文從低能電子發射機理入手，分析了計數管內部離子運動情況，討論了離子濺射和二次電子發射，提出了離子與計數管內壁相互作用及其對計數管的影響，給出了計數管內壁表面處理仿真圖。 |
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The theory of seea is based on the insulator ' s surface emitted secondary electrons when bombarded by electron , includes the process of electron - simulated desorption ( esd ) , the process of desorption gas ionization and the process of the ion influencing the flashover Seea理論以絕緣子表面在電子轟擊下發射二次電子為基礎，包含了電子誘發脫附( esd ) ，和脫附氣體離子化并對閃絡過程產生影響等過程，對表面閃絡現象進行了解釋。 |
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The qualification of multipactor and the characteristic of the angle and velocity of secondary electron were study . bring forward a improved model of multipactor and solve it by a random sample made by monte carlo , as a result , a critical curve of multipactor was gained 提出了一個改進型的次級電子倍增研究模型,利用蒙特卡羅法生成的隨機樣本來求解這個模型,得到了工作在2 . 85ghz的介質片的次級電子倍增敏感度曲線。 |
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A mdc with a refocusing system is simulated with the help of a 2 . 5 - dimensional ( 2 . 5 - d ) software , in which the secondary electrons are considered . these jobs offer a guarantee for the improvement of the tube efficiency . the organization of this paper is as follows 論文的主要內容概括如下:在第一章概述中,首先介紹了行波管及其發展情況,接著介紹了多級降壓收集極和效率問題,分析了提高效率的方法。 |
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In chapter 2 , the principles of mdc for twts , refocusing and the influence of the secondary electrons are analyzed . the electron energy entering the collector is analyzed 第二章從分析互作用后電子能量分布入手,分析多級降壓收集極的工作原理、再聚焦原理和次級電子的影響。 |
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When primary electrons hit the surface of the chunnel , secondary electrons are generated , which make the electron distribution at the exit hole of the chunnel more uniform 當初始電子碰撞絕緣壁時，會產生二次電子，而二次電子能改善電子在通道出口處的電子能量分布的均勻性。 |
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The secondary electron effect is incorporated into the simulation , which are divided into true secondary and reflected primary electrons 分析了次級電子發射的特性,在模擬中將次級電子近似分為真實次級電子和反射的原電子分別處理。 |
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Secondary electron detector 二次電子探測器 |
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Ion bombardment secondary electron image 離子轟擊二次電子象 |